1 http://www.fujielectric.com/products/semiconductor/ 2MBI200VH-120-50 igbt modules igbt module (v series) 1200v / 200a / 2 in one package features high speed switching voltage drive low inductance module structure applications inverter for motor drive ac and dc servo drive amplifer uninterruptible power supply industrial machines, such as welding machines maximum ratings and characteristics absolute maximum ratings (at tc=25c unless otherwise specifed) items symbols conditions maximum ratings units inverter collector-emitter voltage v ces 1200 v gate-emitter voltage v ges 20 v collector current ic continuous tc=100c 200 a tc=25c 240 ic pulse 1ms 400 -ic 200 -ic pulse 1ms 400 collector power dissipation pc 1 device 1110 w junction temperature tj 175 c operating junction temperature (under switching conditions) t jop 150 case temperature t c 125 storage temperature tstg -40 ~ +125 isolation voltage between terminal and copper base (*1) v iso ac : 1min. 2500 vac screw torque mounting (*2) - 6.0 n m terminals (*3) 5.0 note *1: all terminals should be connected together during the test. note *2: recommendable value : 3.0-6.0 nm (m5 or m6) (c) note *3: recommendable value : 2.5-5.0 nm (m6) electrical characteristics (at tj= 25c unless otherwise specifed) items symbols conditions characteristics units min. typ. max. inverter zero gate voltage collector current i ces v ge = 0v, v ce = 1200v - - 2.0 ma gate-emitter leakage current i ges v ce = 0v, v ge = 20v - - 400 na gate-emitter threshold voltage v ge (th) v ce = 20v, i c = 200ma 6.0 6.5 7.0 v collector-emitter saturation voltage v ce (sat) (terminal) v ge = 15v i c = 200a tj=25c - 1.95 2.40 v tj=125c - 2.25 - tj=150c - 2.30 - v ce (sat) (chip) tj=25c - 1.75 2.15 tj=125c - 2.05 - tj=150c - 2.10 - input capacitance cies v ce = 10v, v ge = 0v, f = 1mhz - 18 - nf turn-on time ton v cc = 600v i c = 200a v ge = 15v r g = 2.7? tj = 150c - 0.60 - s tr - 0.20 - tr (i) - 0.05 - turn-off time toff - 0.80 - tf - 0.08 - forward on voltage v f (terminal) v ge = 0v i f = 200a tj=25c - 1.85 2.35 v tj=125c - 2.00 - tj=150c - 1.95 - v f (chip) tj=25c - 1.70 2.15 tj=125c - 1.85 - tj=150c - 1.80 - reverse recovery time trr i f = 200a - 0.15 - s thermal resistance characteristics items symbols conditions characteristics units min. typ. max. thermal resistance (1device) rth(j-c) igbt - - 0.135 c/w fwd - - 0.200 contact thermal resistance (1device) (*4) rth(c-f) with thermal compound - 0.0250 - note *4: this is the value which is defned mounting on the additional cooling fn with thermal compound.
2 igbt modules 2MBI200VH-120-50 http://www.fujielectric.com/products/semiconductor/ 3 characteristics (representative) collector current vs. collector-emitter voltage (typ.) tj= 25c / chip collector current vs. collector-emitter voltage (typ.) tj= 150c / chip collector current vs. collector-emitter voltage (typ.) v ge = 15v / chip gate capacitance vs. collector-emitter voltage (typ.) v ge = 0v, ?= 1mhz, tj= 25c collector-emitter voltage vs. gate-emitter voltage (typ.) tj= 25c / chip dynamic gate charge (typ.) vcc=600v, ic=200a, tj= 25c collector-emitter voltage: v ce [v] gat e c apac it anc e: c ie s, c oe s, c res [ nf ] 0 100 200 300 400 500 0 1 2 3 4 5 collector-emitter voltage: v ce [v] c o lle c t o r c u rr en t: i c [ a] v ge =20v 15v 12v 10v 8v 0 100 200 300 400 500 0 1 2 3 4 5 collector-emitter voltage: v ce [v] c o llec t o r c u rr en t: i c [ a] v ge = 20v 15v 12v 10v 8v 0 100 200 300 400 500 0 1 2 3 4 5 collector-emitter voltage: v ce [v] c o lle c t o r c u rr en t: i c [ a] 125c tj = 25 c 150c 0 2 4 6 8 10 5 10 15 20 25 gate-emitter voltage: v ge [v] c olle ct or-em i tt er volt age: v c e [ v] ic=400a ic=200a ic=100a 0 500 1000 1500 2000 2500 gate charge: qg [nc] c olle ct or-em i tt er v olt age: v c e [ 200v/ div ] gat e-em i tt er v olt age: v ge [ 5v/ div ] v ge v ce 0.1 1 10 100 cies coes cres 0 5 10 15 20 25 30
2 3 igbt modules 2MBI200VH-120-50 http://www.fujielectric.com/products/semiconductor/ reverse bias safe operating area (max.) +v ge =15v, -v ge =15v, r g =2.7?, tj=150c switching time vs. gate resistance (typ.) vcc=600v, ic=200a, v ge =15v, tj=125c switching loss vs. collector current (typ.) vcc=600v, v ge =15v, r g =2.7?, tj=125c, 150c switching time vs. collector current (typ.) switching time vs. collector current (typ.) vcc=600v, v ge =15v, r g =2.7?, tj=125c vcc=600v, v ge =15v, r g =2.7?, tj=150c switching loss vs. gate resistance (typ.) vcc=600v, ic=200a, v ge =15v, tj=125c, 150c 10 100 1000 10000 0 100 200 300 400 500 collector current: ic [a] sw it c h i ng t im e : t on , t r , t o ff, tf [ n s e c ] toff ton tr tf 10 100 1000 10000 0 100 200 300 400 500 collector current: ic [a] sw it c h i ng t im e : t on , t r , t o ff, tf [ n s e c ] toff ton tr tf 10 100 1000 10000 1 10 100 gate resistance: r g [?] sw it c h i ng t im e : t on , t r , t o ff, tf [ n s e c ] toff ton tr tf 0 20 40 60 0 100 200 300 400 500 collector current: ic [a] sw it c h i ng lo ss : e on , eo ff, err [ mj / pu ls e ] eon eoff err tj=125 o c tj=150 o c 0 50 100 1 10 100 gate resistance: r g [?] sw it c h i ng lo ss : e on , eo ff, err [ mj / pu ls e ] eoff err eon tj=125 o c tj=150 o c 0 100 200 300 400 500 collector-emitter voltage: v ce [v] c o llec t o r c u rr en t: i c [ a] 0 200 400 600 800 1000 1200 1400
4 igbt modules 2MBI200VH-120-50 http://www.fujielectric.com/products/semiconductor/ 5 reverse recovery characteristics (typ.) vcc=600v, v ge =15v, r g =2.7?, tj=150c reverse recovery characteristics (typ.) vcc=600v, v ge =15v, r g =2.7?, tj=125c transient thermal resistance (max.) forward current vs. forward voltage (typ.) chip 0 100 200 300 400 500 0 1 2 3 forward on voltage: v f [v] f o rw a rd c u rr en t: i f [ a] 125c tj=25c 150c 10 100 1000 10000 0 100 200 300 400 500 forward current: i f [a] r e v e rs e re c o v e ry c u rr en t: i rr [ a] r e v e rs e re c o v e ry t im e : t rr [ n s e c ] irr t rr 0.001 0.01 0.1 1 0.001 0.01 0.1 1 pulse width : pw [sec] t herm al res i st ans e: rt h(j-c ) [ c/ w ] fwd igbt 10 100 1000 10000 0 100 200 300 400 500 forward current: i f [a] r e v e rs e re c o v e ry c u rr en t: i rr [ a] r e v e rs e re c o v e ry t im e : t rr [ n s e c ] irr t rr
4 5 igbt modules 2MBI200VH-120-50 http://www.fujielectric.com/products/semiconductor/ c 1 c 2 e 1 e 2 e 2 g 2 e 1 g 1 c 1 c 2 e 1 e 2 e 2 g 2 e 1 g 1 outline drawings, mm equivalent circuit schematic
6 igbt modules 2MBI200VH-120-50 http://www.fujielectric.com/products/semiconductor/ warning 1. this catalog contains the product specifcations, characteristics, data, materials, and structures as of may 2011. the contents are subject to change without notice for specifcation changes or other reasons. when using a product listed in this catalog, be sur to obtain the latest specifcations. 2. all applications described in this catalog exemplify the use of fuji's products for your reference only. no right or license, either express or implied, under any patent, copyright, trade secret or other intellectual property right owned by fuji electric co., ltd. is (or shall be deemed) granted. fuji electric co., ltd. makes no representation or warranty, whether express or implied, relating to the infringement or alleged infringement of other's intellectual property rights which may arise from the use of the applications described herein. 3. although fuji electric co., ltd. is enhancing product quality and reliability, a small percentage of semiconductor products may become faulty. when using fuji electric semiconductor products in your equipment, you are requested to take adequate safety measures to prevent the equipment from causing a physical injury, fre, or other problem if any of the products become faulty. it is recommended to make your design failsafe, fame retardant, and free of malfunction. 4. the products introduced in this catalog are intended for use in the following electronic and electrical equipment which has normal reliability requirements. ? computers ? oa equipment ? communications equipment (terminal devices) ? measurement equipment ? machine tools ? audiovisual equipment ? electrical home appliances ? personal equipment ? industrial robots etc. 5. if you need to use a product in this catalog for equipment requiring higher reliability than normal, such as for the equipment listed below, it is imperative to contact fuji electric co., ltd. to obtain prior approval. when using these products for such equipment, take adequate measures such as a backup system to prevent the equipment from malfunctioning even if a fuji's product incorporated in the equipment becomes faulty. ? transportation equipment (mounted on cars and ships) ? trunk communications equipment ? traffc-signal control equipment ? gas leakage detectors with an auto-shut-off feature ? emergency equipment for responding to disasters and anti-burglary devices ? safety devices ? medical equipment 6. do not use products in this catalog for the equipment requiring strict reliability such as the following and equivalents to strategic equipment (without limitation). ? space equipment ? aeronautic equipment ? nuclear control equipment ? submarine repeater equipment 7. copyright ?1996-2011 by fuji electric co., ltd. all rights reserved. no part of this catalog may be reproduced in any form or by any means without the express permission of fuji electric co., ltd. 8. if you have any question about any portion in this catalog, ask fuji electric co., ltd. or its sales agents before using the product. neither fuji electric co., ltd. nor its agents shall be liable for any injury caused by any use of the products not in accordance with instructions set forth herein.
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